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供应K8P3215UQB-DI4B,原装现货。
本公司只做原装。
32M Bit (2M x16) Page Mode / Multi-Bank NOR Flash Memory
ORDERING INFORMATION
K8 P 32 15 U Q B - P E 4 A
Samsung
NOR Flash Memory
Device Type
Page Mode
Density & Bank Architecture
32 Mbits & 4 Banks
Operating Temperature Range
C = Commercial Temp. (0 °C to 70 °C)
I = Industrial Temp. (-40 °C to 85 °C)
E = Extended Temp. (-25 °C to 85 °C)
Block Architecture
Q = Top and Bottom Boot Block
Version
3th Generation
Access Time
4A = 55ns/20ns
4B = 60ns/25ns
4C = 65ns/25ns
4D = 70ns/30ns
Operating Voltage Range
2.7V to 3.6V
Package
P = TSOP1(Lead Free), D = FBGA(Lead Free)
E = FBGA(Lead Free, 1.0mm ball pitch)
Organization
x16
Table 2. K8P3215UQB DEVICE BANK DIVISIONS
Bank 0, Bank 3 Bank 1, Bank 2
Mbit Block Sizes Mbit Block Sizes
4 Mbit 4 Kw x 8 and
32 Kw x 7 12 Mbit 32 Kw x 24
Table 3. OTP BLOCK
After entering